SI7911DN-T1-E3
Part NoSI7911DN-T1-E3
ManufacturerVishay
DescriptionMOSFET 2P-CH 20V 4.2A 1212-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time35 ns
Rise Time35 ns
Rds On Max51 mΩ
Number of Pins8
Power Dissipation1.3 W
Number of Elements2
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time70 ns
Element ConfigurationDual
Max Power Dissipation1.3 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance51 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)4.2 A
Drain to Source Voltage (Vdss)20 V
In Stock:
19461
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