SI7938DP-T1-GE3
Part NoSI7938DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET 2N-CH 40V 60A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height1.17 mm
Weight506.605978 mg
Fall Time15 ns
Lead FreeLead Free
Rise Time19 ns
REACH SVHCNo SVHC
Rds On Max5.8 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs2.5 V
Number of Pins8
Input Capacitance2.3 nF
Power Dissipation3.5 W
Threshold Voltage2.5 V
Number of Channels2
Number of Elements2
Turn-On Delay Time11 ns
Turn-Off Delay Time33 ns
Element ConfigurationDual
Max Power Dissipation46 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.8 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)60 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)40 V
Manufacturer Package IdentifierS17-0173-DUAL
Drain to Source Breakdown Voltage40 V
In Stock:
42879
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.6837 | |
| 10 | 1.65 | |
| 100 | 1.5995 | |
| 1000 | 1.549 | |
| 10000 | 1.4817 |
Associated Product
