SI7942DP-T1-GE3
Part NoSI7942DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET 2N-CH 100V 3.8A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time15 ns
Rise Time15 ns
Rds On Max49 mΩ
Schedule B8541290080
Case/PackageSOIC
Number of Pins8
Power Dissipation1.4 W
Number of Channels2
Number of Elements2
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time35 ns
Element ConfigurationDual
Max Power Dissipation1.4 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance49 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)3.8 A
Drain to Source Voltage (Vdss)100 V
In Stock:
16107
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.94 | |
| 10 | 2.8812 | |
| 100 | 2.793 | |
| 1000 | 2.7048 | |
| 10000 | 2.5872 |
Associated Product
