SI8401DB-T1-E3
Part NoSI8401DB-T1-E3
ManufacturerVishay
DescriptionMOSFET P-CH 20V 3.6A 2X2 4-MFP
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.6 mm
Height360 µm
Length1.6 mm
Fall Time28 ns
Lead FreeLead Free
Rise Time28 ns
REACH SVHCUnknown
Rds On Max65 mΩ
Resistance65 mΩ
Nominal Vgs-4.5 V
TerminationSMD/SMT
Number of Pins4
Power Dissipation1.47 W
Threshold Voltage-4.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time17 ns
Radiation HardeningNo
Turn-Off Delay Time88 ns
Element ConfigurationSingle
Max Power Dissipation1.47 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance65 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)3.6 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
19143
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1286 | |
| 10 | 1.106 | |
| 100 | 1.0722 | |
| 1000 | 1.0383 | |
| 10000 | 0.9932 |
Associated Product
