SI8405DB-T1-E1
Part NoSI8405DB-T1-E1
ManufacturerVishay
DescriptionMOSFET P-CH 12V 3.6A 2X2 4-MFP
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time32 ns
Rise Time32 ns
Rds On Max55 mΩ
Case/PackageBGA
Number of Pins4
Power Dissipation1.47 W
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time120 ns
Element ConfigurationSingle
Max Power Dissipation1.47 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance55 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)3.6 A
Drain to Source Voltage (Vdss)12 V
Drain to Source Breakdown Voltage-12 V
In Stock:
18389
Pricing
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Associated Product
IPP08CN10LG
INFINEON
Power Field-Effect Transistor, 98A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
Power Field-Effect Transistor, 98A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
