SIA429DJT-T1-GE3
Part NoSIA429DJT-T1-GE3
ManufacturerVISHAY
DescriptionQFN6
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Fall Time25 ns
Lead FreeLead Free
PackagingTape & Reel (TR)
Rise Time25 ns
REACH SVHCUnknown
Rds On Max20.5 mΩ
Schedule B8541290080
Nominal Vgs-400 mV
Number of Pins6
Input Capacitance1.75 nF
Power Dissipation3.5 W
Number of Channels1
Number of Elements1
Turn-On Delay Time22 ns
Radiation HardeningNo
Turn-Off Delay Time70 ns
Element ConfigurationSingle
Max Power Dissipation19 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance20.5 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)10.6 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
16357
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.564 | |
| 10 | 0.5527 | |
| 100 | 0.5358 | |
| 1000 | 0.5189 | |
| 10000 | 0.4963 |
Associated Product
