SIA445EDJ-T1-GE3
Part NoSIA445EDJ-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 20V 12A SC-70
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Lead FreeLead Free
PackagingDigi-Reel®
REACH SVHCUnknown
Rds On Max16.5 mΩ
Resistance16.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins6
Input Capacitance2.13 nF
Power Dissipation3.5 W
Threshold Voltage-500 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time55 ns
Element ConfigurationSingle
Max Power Dissipation19 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance13.5 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)-12 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
15646
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5124 | |
| 10 | 0.5022 | |
| 100 | 0.4868 | |
| 1000 | 0.4714 | |
| 10000 | 0.4509 |
Associated Product
249NQ150PBF
Vishay
Rectifier Diode, Schottky, 1 Phase, 1 Element, 240A, 150V V(RRM), Silicon, PLASTIC, D-67, HALF PACK-1
Vishay
Rectifier Diode, Schottky, 1 Phase, 1 Element, 240A, 150V V(RRM), Silicon, PLASTIC, D-67, HALF PACK-1
