SIA447DJ-T1-GE3
Part NoSIA447DJ-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 12V 12A SC-70-6L
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Fall Time50 ns
Rise Time60 ns
REACH SVHCUnknown
Rds On Max13.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins6
Input Capacitance2.88 nF
Power Dissipation3.5 W
Threshold Voltage-400 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time30 ns
Radiation HardeningNo
Turn-Off Delay Time60 ns
Element ConfigurationSingle
Max Power Dissipation19 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance11 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)-12 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-12 V
Drain to Source Breakdown Voltage-12 V
In Stock:
16414
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4935 | |
| 10 | 0.4836 | |
| 100 | 0.4688 | |
| 1000 | 0.454 | |
| 10000 | 0.4343 |
Associated Product
