SIA906EDJ-T1-GE3
Part NoSIA906EDJ-T1-GE3
ManufacturerVISHAY
DescriptionTRFETDUALN-CH20VSC-7
Datasheet
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Specification
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Weight28.009329 mg
Fall Time12 ns
Lead FreeLead Free
Rise Time12 ns
Rds On Max46 mΩ
Resistance46 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Case/PackageTSSOP
Number of Pins6
Contact PlatingTin
Input Capacitance350 pF
Power Dissipation1.9 W
Number of Channels2
Number of Elements2
Turn-On Delay Time5 ns
Turn-Off Delay Time15 ns
Element ConfigurationDual
Max Power Dissipation7.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance37 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)4.5 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)20 V
Manufacturer Package IdentifierC-07431-DUAL
Drain to Source Breakdown Voltage20 V
In Stock:
20706
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.606 | |
10 | 0.5939 | |
100 | 0.5757 | |
1000 | 0.5575 | |
10000 | 0.5333 |