SIA910EDJ-T1-GE3
Part NoSIA910EDJ-T1-GE3
ManufacturerVishay
DescriptionMOSFET 2N-CH 12V 4.5A SC-70-6
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height850 µm
Weight28.009329 mg
Fall Time12 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time12 ns
REACH SVHCUnknown
Rds On Max28 mΩ
Resistance28 MΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Nominal Vgs400 mV
Number of Pins6
Input Capacitance455 pF
Power Dissipation1.9 W
Threshold Voltage400 mV
Number of Channels2
Number of Elements2
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time25 ns
Element ConfigurationDual
Max Power Dissipation7.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance23 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)4.5 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)12 V
Manufacturer Package IdentifierC-07431-DUAL
Drain to Source Breakdown Voltage12 V
In Stock:
17598
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4731 | |
| 10 | 0.4636 | |
| 100 | 0.4494 | |
| 1000 | 0.4353 | |
| 10000 | 0.4163 |
Associated Product
