SIB417DK-T1-GE3
Part NoSIB417DK-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 8V 9A SC75-6
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id1V @ 250µA
Vgs (Max)±5V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePowerPAK® SC-75-6L Single
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs52 mOhm @ 5.6A, 4.5V
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
PackagingTape & Reel (TR)
Package / CasePowerPAK® SC-75-6L
Other NamesSIB417DK-T1-GE3TR
SIB417DKT1GE3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds675pF @ 4V
Gate Charge (Qg) (Max) @ Vgs12.75nC @ 5V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Drain to Source Voltage (Vdss)8V
Detailed DescriptionP-Channel 8V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single
Current - Continuous Drain (Id) @ 25°C9A (Tc)
In Stock:
6170
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.37 | |
| 10 | 0.3626 | |
| 100 | 0.3515 | |
| 1000 | 0.3404 | |
| 10000 | 0.3256 |
Associated Product
