SIE830DF-T1-E3
RoHS

SIE830DF-T1-E3

Part NoSIE830DF-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 50A 10-POLARPAK
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ECAD Module SIE830DF-T1-E3
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Specification
RoHSCompliant
MountSurface Mount
Fall Time95 ns
Rise Time105 ns
Rds On Max4.2 mΩ
Number of Pins10
Input Capacitance5.5 nF
Turn-On Delay Time35 ns
Radiation HardeningNo
Turn-Off Delay Time70 ns
Element ConfigurationSingle
Max Power Dissipation104 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.2 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)27 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock: 6948
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product