SIHP22N60E-GE3
Part NoSIHP22N60E-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 600V 21A TO220AB
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountThrough Hole
Width4.65 mm
Height9.01 mm
Length10.51 mm
Weight6.000006 g
Fall Time54 ns
Lead FreeLead Free
Rise Time68 ns
REACH SVHCUnknown
Rds On Max180 mΩ
Resistance180 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-220AB
Number of Pins3
Contact PlatingTin
Input Capacitance1.92 nF
Power Dissipation227 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time18 ns
Radiation HardeningNo
Turn-Off Delay Time59 ns
Element ConfigurationSingle
Max Power Dissipation227 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance180 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)21 A
Drain to Source Voltage (Vdss)600 V
In Stock:
17247
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.9964 | |
| 10 | 3.9165 | |
| 100 | 3.7966 | |
| 1000 | 3.6767 | |
| 10000 | 3.5168 |
Associated Product
