SIR316DP-T1-GE3
Part NoSIR316DP-T1-GE3
ManufacturerVISHAY
DescriptionSiR316DP N-Channel 25 V (D-S) MOSFET
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time8 ns
Rise Time9 ns
REACH SVHCUnknown
Case/PackageSO
Number of Pins8
Power Dissipation3.9 W
Threshold Voltage1.2 V
Number of Elements1
Turn-On Delay Time24 ns
Radiation HardeningNo
Turn-Off Delay Time14 ns
Element ConfigurationSingle
Max Power Dissipation25 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5.4 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)30 A
Drain to Source Voltage (Vdss)25 V
In Stock:
7238
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.45 | |
| 10 | 0.441 | |
| 100 | 0.4275 | |
| 1000 | 0.414 | |
| 10000 | 0.396 |
Associated Product
