SIR422DP-T1-GE3
Part NoSIR422DP-T1-GE3
ManufacturerVISHAY
DescriptionVISHAY-2018
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount, Through Hole
Width5.0038 mm
Height1.0668 mm
Length5.969 mm
Weight506.605978 mg
Fall Time11 ns
Lead FreeLead Free
Rise Time84 ns
REACH SVHCUnknown
Rds On Max6.6 mΩ
Resistance6.6 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs1.2 V
Case/PackageTO-262-3
Number of Pins8
Input Capacitance1.785 nF
Power Dissipation5 W
Threshold Voltage1.2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time19 ns
Radiation HardeningNo
Turn-Off Delay Time28 ns
Element ConfigurationSingle
Max Power Dissipation34.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5.4 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)40 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)40 V
Manufacturer Package IdentifierS17-0173-Single
Drain to Source Breakdown Voltage40 V
In Stock:
32754
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0735 | |
| 10 | 1.052 | |
| 100 | 1.0198 | |
| 1000 | 0.9876 | |
| 10000 | 0.9447 |
Associated Product
SST39SF010A-70-4C-WHE
Microchip
Parallel Flash, 4.5 - 5.5 V, 1 Mbit, x8, 55 ns, -40°C to +85°C, TSOP-32, RoHS
Microchip
Parallel Flash, 4.5 - 5.5 V, 1 Mbit, x8, 55 ns, -40°C to +85°C, TSOP-32, RoHS
