SIR424DP-T1-GE3
Part NoSIR424DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 20V 30A PPAK SO-8
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time10 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max5.5 mΩ
Resistance7.4 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance1.25 nF
Power Dissipation4.8 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time18 ns
Radiation HardeningNo
Turn-Off Delay Time23 ns
Max Power Dissipation41.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.6 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)30 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V
In Stock:
16440
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.846 | |
| 10 | 0.8291 | |
| 100 | 0.8037 | |
| 1000 | 0.7783 | |
| 10000 | 0.7445 |
Associated Product
