SIR460DP-T1-GE3
Part NoSIR460DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 40A PPAK SO-8
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time12 ns
Lead FreeLead Free
Rise Time16 ns
REACH SVHCUnknown
Rds On Max4.7 mΩ
Nominal Vgs1 V
Case/PackageTO-252-3
Number of Pins8
Input Capacitance2.071 nF
Power Dissipation5 W
Threshold Voltage1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time28 ns
Element ConfigurationSingle
Max Power Dissipation5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3.8 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)24.3 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)30 V
Manufacturer Package IdentifierS17-0173_SINGLE
Drain to Source Breakdown Voltage30 V
In Stock:
30904
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9153 | |
| 10 | 0.897 | |
| 100 | 0.8695 | |
| 1000 | 0.8421 | |
| 10000 | 0.8055 |
Associated Product
