SIR846ADP-T1-GE3
Part NoSIR846ADP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 100V 60A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.26 mm
Height1.12 mm
Length6.25 mm
Weight506.605978 mg
Lead FreeLead Free
PackagingDigi-Reel®
REACH SVHCUnknown
Rds On Max7.8 mΩ
Resistance9.5 MΩ
Number of Pins8
Contact PlatingTin
Input Capacitance2.35 nF
Power Dissipation5.4 W
Threshold Voltage1.8 V
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time28 ns
Element ConfigurationSingle
Max Power Dissipation83 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7.8 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)60 A
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V
In Stock:
17169
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.0832 | |
| 10 | 2.0415 | |
| 100 | 1.979 | |
| 1000 | 1.9165 | |
| 10000 | 1.8332 |
Associated Product
