SIR872DP-T1-GE3
RoHS

SIR872DP-T1-GE3

Part NoSIR872DP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 150V 53.7A PPAK SO-8
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ECAD Module SIR872DP-T1-GE3
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Specification
RoHSCompliant
MountSurface Mount
Lead FreeLead Free
PackagingTape & Reel (TR)
REACH SVHCUnknown
Rds On Max18 mΩ
Number of Pins8
Contact PlatingTin
Input Capacitance2.13 nF
Power Dissipation6.25 W
Threshold Voltage1.5 V
Number of Elements1
Radiation HardeningNo
Max Power Dissipation104 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance20 MΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)53.7 A
Drain to Source Voltage (Vdss)150 V
In Stock: 17359
Pricing
QTY UNIT PRICE EXT PRICE
1 2.255
10 2.2099
100 2.1422
1000 2.0746
10000 1.9844
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product