SIR880DP-T1-GE3
Part NoSIR880DP-T1-GE3
ManufacturerVishay
DescriptionQFN
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height1.17 mm
Weight506.605978 mg
Lead FreeLead Free
PackagingDigi-Reel®
REACH SVHCUnknown
Rds On Max5.9 mΩ
Schedule B8541290080
Nominal Vgs1.2 V
Number of Pins8
Contact PlatingTin
Input Capacitance2.44 nF
Power Dissipation6.25 W
Threshold Voltage1.2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time38 ns
Element ConfigurationDual
Max Power Dissipation104 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance4.9 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)60 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)80 V
Manufacturer Package IdentifierS17-0173-Single
Drain to Source Breakdown Voltage80 V
In Stock:
19327
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.0392 | |
| 10 | 2.9784 | |
| 100 | 2.8872 | |
| 1000 | 2.7961 | |
| 10000 | 2.6745 |
Associated Product
