SIRA06DP-T1-GE3
Part NoSIRA06DP-T1-GE3
ManufacturerVishay
DescriptionQFN
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width5.26 mm
Height1.12 mm
Length6.25 mm
Weight506.605978 mg
Fall Time20 ns
Lead FreeLead Free
REACH SVHCUnknown
Rds On Max2.5 mΩ
Resistance2.5 mΩ
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance3.595 nF
Power Dissipation5 W
Threshold Voltage1.1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time24 ns
Radiation HardeningNo
Turn-Off Delay Time30 ns
Element ConfigurationSingle
Max Power Dissipation62.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance2.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)40 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
36721
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9379 | |
| 10 | 0.9191 | |
| 100 | 0.891 | |
| 1000 | 0.8629 | |
| 10000 | 0.8254 |
Associated Product
MT48V4M32LFB5-8XT:G
Micron Technology
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90
Micron Technology
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90
