SIRA18ADP-T1-GE3
Part NoSIRA18ADP-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 30.6A POWERPAKSO
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id2.4V @ 250µA
Vgs (Max)+20V, -16V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePowerPAK® SO-8
Series-
Rds On (Max) @ Id, Vgs8.7 mOhm @ 10A, 10V
Power Dissipation (Max)14.7W (Tc)
PackagingCut Tape (CT)
Package / CasePowerPAK® SO-8
Other NamesSIRA18ADP-T1-GE3CT
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time32 Weeks
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs21.5nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 30.6A (Tc) 14.7W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C30.6A (Tc)
In Stock:
18438
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3772 | |
| 10 | 0.3697 | |
| 100 | 0.3583 | |
| 1000 | 0.347 | |
| 10000 | 0.3319 |
Associated Product
