SIS330DN-T1-GE3
Part NoSIS330DN-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 35A 1212-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.15 mm
Height1.12 mm
Length3.15 mm
REACH SVHCUnknown
Rds On Max5.6 mΩ
Case/PackageSOIC
Number of Pins8
Input Capacitance1.3 nF
Threshold Voltage1.2 V
Number of Channels1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time19 ns
Element ConfigurationSingle
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5.6 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)35 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
16553
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Associated Product
