SIS414DN-T1-GE3
Part NoSIS414DN-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 20A 1212-8 PPAK
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time8 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time13 ns
REACH SVHCUnknown
Rds On Max16 mΩ
Number of Pins8
Input Capacitance795 pF
Power Dissipation3.4 W
Threshold Voltage600 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time21 ns
Element ConfigurationSingle
Max Power Dissipation31 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance13 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)20 A
Drain to Source Voltage (Vdss)30 V
In Stock:
17141
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Associated Product
