SISA18ADN-T1-GE3
Part NoSISA18ADN-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 38.3A 1212-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time7 ns
PackagingTape & Reel (TR)
Rise Time10 ns
REACH SVHCUnknown
Rds On Max7.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance1 nF
Power Dissipation19.8 W
Threshold Voltage1.2 V
Number of Elements1
Radiation HardeningNo
Turn-Off Delay Time15 ns
Element ConfigurationSingle
Max Power Dissipation19.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance9.6 mΩ
Gate to Source Voltage (Vgs)-16 V
Continuous Drain Current (ID)38.3 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
17870
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6324 | |
| 10 | 0.6198 | |
| 100 | 0.6008 | |
| 1000 | 0.5818 | |
| 10000 | 0.5565 |
Associated Product
