SISS23DN-T1-GE3
Part NoSISS23DN-T1-GE3
ManufacturerVISHAY
DescriptionPPAK1212
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time50 ns
PackagingDigi-Reel®
Rise Time50 ns
REACH SVHCNo SVHC
Rds On Max4.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance8.84 nF
Power Dissipation4.8 W
Threshold Voltage900 mV
Number of Elements1
Radiation HardeningNo
Turn-Off Delay Time140 ns
Element ConfigurationSingle
Max Power Dissipation57 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance4.5 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)27 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
19008
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9545 | |
| 10 | 0.9354 | |
| 100 | 0.9068 | |
| 1000 | 0.8781 | |
| 10000 | 0.84 |
Associated Product
