SQ2361EES-T1-GE3
Part NoSQ2361EES-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 60V 2.5A SOT23
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Weight1.437803 g
Fall Time8 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time8 ns
REACH SVHCUnknown
Rds On Max150 mΩ
Nominal Vgs-2.5 V
Case/PackageSOT-23
Number of Pins3
Input Capacitance545 pF
Power Dissipation2 W
Threshold Voltage-1.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time19 ns
Element ConfigurationSingle
Max Power Dissipation2 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance115 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)2.5 A
Drain to Source Voltage (Vdss)-60 V
Drain to Source Breakdown Voltage-60 V
In Stock:
15229
Pricing
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Associated Product
HFB35HB20CSCV
Infineon
Rectifier Diode, 1 Phase, 2 Element, 35A, Silicon, TO-254AA, HERMETIC SEALED PACKAGE-3
Infineon
Rectifier Diode, 1 Phase, 2 Element, 35A, Silicon, TO-254AA, HERMETIC SEALED PACKAGE-3
