SQ2362ES-T1_GE3
Part NoSQ2362ES-T1_GE3
ManufacturerVishay
DescriptionMOSFET N-CH 60V 4.4A TO236
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time18 ns
Lead FreeLead Free
Rise Time20 ns
REACH SVHCNo SVHC
Rds On Max95 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-236-3
Number of Pins3
Input Capacitance1 nF
Power Dissipation3 W
Threshold Voltage1.5 V
Number of Channels1
Turn-On Delay Time6 ns
Turn-Off Delay Time14 ns
Max Power Dissipation5 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance57 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)4.3 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V
In Stock:
35937
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6592 | |
| 10 | 0.646 | |
| 100 | 0.6262 | |
| 1000 | 0.6065 | |
| 10000 | 0.5801 |
Associated Product
MAX16072RS16D0+T
Analog Devices
µP Supervisors Offered in a Space-Saving, 1mm x 1mm Package and Consume Very Little Power
Analog Devices
µP Supervisors Offered in a Space-Saving, 1mm x 1mm Package and Consume Very Little Power
