SQ3419EV-T1_GE3
Part NoSQ3419EV-T1_GE3
ManufacturerVishay
DescriptionMOSFET P-CH 40V 7.4A 6TSOP
Datasheet
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ECAD Module
Specification
RoHSNon-Compliant
Height1.1 mm
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Power Dissipation5 W
Number of Channels1
Turn-On Delay Time8 ns
Turn-Off Delay Time26 ns
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance48 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-6.9 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)-40 V
Drain to Source Breakdown Voltage-40 V
In Stock:
19965
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6072 | |
| 10 | 0.5951 | |
| 100 | 0.5768 | |
| 1000 | 0.5586 | |
| 10000 | 0.5343 |
Associated Product
