SQJ431EP-T1_GE3
Part NoSQJ431EP-T1_GE3
ManufacturerVISHAY
DescriptionTransMOSFETP-CH200V1
Datasheet
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ECAD Module
Specification
RoHSCompliant
Height1.267 mm
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Power Dissipation83 W
Number of Channels1
Turn-On Delay Time15 ns
Turn-Off Delay Time44 ns
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance178 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-12 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)-200 V
Drain to Source Breakdown Voltage-200 V
In Stock:
16677
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.109 | |
| 10 | 2.0668 | |
| 100 | 2.0035 | |
| 1000 | 1.9403 | |
| 10000 | 1.8559 |
Associated Product
