SQJ886EP-T1_GE3
Part NoSQJ886EP-T1_GE3
ManufacturerVishay
DescriptionMOSFET N-CH 40V 60A PPAK SO-8
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time6 ns
Lead FreeLead Free
PackagingTape & Reel (TR)
Rise Time17 ns
REACH SVHCUnknown
Rds On Max4.5 mΩ
Number of Pins8
Input Capacitance2.922 nF
Power Dissipation55 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time8 ns
Radiation HardeningNo
Turn-Off Delay Time29 ns
Max Power Dissipation55 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3.6 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)60 A
Drain to Source Voltage (Vdss)40 V
Drain to Source Breakdown Voltage40 V
In Stock:
18796
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3137 | |
| 10 | 1.2874 | |
| 100 | 1.248 | |
| 1000 | 1.2086 | |
| 10000 | 1.1561 |
Associated Product
