SQJ970EP-T1-GE3
Part NoSQJ970EP-T1-GE3
ManufacturerVISHAY
DescriptionMOSFET DUAL N-CH 40V PPAK 8SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time10 ns
Rise Time8 ns
REACH SVHCUnknown
Rds On Max20 mΩ
Nominal Vgs2 V
Number of Pins8
Input Capacitance2.165 nF
Power Dissipation48 W
Threshold Voltage2 V
Number of Elements2
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time50 ns
Element ConfigurationDual
Max Power Dissipation48 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance20 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8 A
Drain to Source Voltage (Vdss)40 V
Drain to Source Breakdown Voltage40 V
In Stock:
8906
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.87 | |
| 10 | 0.8526 | |
| 100 | 0.8265 | |
| 1000 | 0.8004 | |
| 10000 | 0.7656 |
Associated Product
