SQM120N10-3M8_GE3
Part NoSQM120N10-3M8_GE3
ManufacturerVishay
DescriptionMOSFET N-CH 100V 120A TO263
Datasheet
Download Now!
ECAD Module
Specification
Vgs(th) (Max) @ Id3.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-263 (D²Pak)
SeriesAutomotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs3.8 mOhm @ 20A, 10V
Power Dissipation (Max)375W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesSQM120N10-3M8_GE3TR
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds7230pF @ 25V
Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Current - Continuous Drain (Id) @ 25°C120A (Tc)
In Stock:
18798
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.0221 | |
| 10 | 3.9417 | |
| 100 | 3.821 | |
| 1000 | 3.7003 | |
| 10000 | 3.5394 |
Associated Product
