SUD09P10-195-GE3
Part NoSUD09P10-195-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 100V 8.8A DPAK
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height2.507 mm
Fall Time9 ns
Lead FreeLead Free
PackagingCut Tape (CT)
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max195 mΩ
Resistance195 mΩ
Schedule B8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageDPAK
Number of Pins3
Input Capacitance1.055 nF
Power Dissipation2.5 W
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time33 ns
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance162 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-8.8 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-100 V
Drain to Source Breakdown Voltage-100 V
In Stock:
17484
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8881 | |
| 10 | 0.8703 | |
| 100 | 0.8437 | |
| 1000 | 0.8171 | |
| 10000 | 0.7815 |
Associated Product
