Si4539DY-T1-E3
Part NoSi4539DY-T1-E3
ManufacturerVISHAY
DescriptionSmall Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
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ECAD Module
Specification
RoHSCompliant
Width4 mm
Height1.55 mm
Length5 mm
Weight506.605978 mg
Fall Time15 ns
Rise Time13 ns
Case/PackageSO
Power Dissipation2 W
Number of Channels2
Turn-On Delay Time9 ns
Turn-Off Delay Time25 ns
Max Power Dissipation2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance53 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5.8 A
Drain to Source Voltage (Vdss)30 V
In Stock:
13993
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Associated Product
