Si7415DN-T1-GE3
Part NoSi7415DN-T1-GE3
ManufacturerVISHAY
DescriptionST
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time12 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max65 mΩ
Resistance65 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-3 V
TerminationSMD/SMT
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.5 W
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time12 ns
Dual Supply Voltage-60 V
Radiation HardeningNo
Turn-Off Delay Time22 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance65 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-5.7 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-60 V
Manufacturer Package IdentifierSI7415DN-T1-GE3
Drain to Source Breakdown Voltage-60 V
In Stock:
23084
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2782 | |
| 10 | 1.2526 | |
| 100 | 1.2143 | |
| 1000 | 1.1759 | |
| 10000 | 1.1248 |
Associated Product
