SiS410DN-T1-GE3
Part NoSiS410DN-T1-GE3
ManufacturerVISHAY
DescriptionSOP
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time15 ns
Lead FreeLead Free
Rise Time15 ns
REACH SVHCUnknown
Rds On Max4.8 mΩ
Resistance4.8 mΩ
Number of Pins8
Input Capacitance1.6 nF
Power Dissipation3.8 W
Threshold Voltage1.2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time30 ns
Element ConfigurationSingle
Max Power Dissipation5.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)35 A
Drain to Source Voltage (Vdss)20 V
In Stock:
15998
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9682 | |
| 10 | 0.9488 | |
| 100 | 0.9198 | |
| 1000 | 0.8907 | |
| 10000 | 0.852 |
Associated Product
