CGD65A055S2-T07
Part NoCGD65A055S2-T07
ManufacturerCambridge GaN Devices
Description650V GAN HEMT, 55MOHM, DFN8X8. W
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesICeGaN™
ProductStatusActive
FETTypeGaNFET (Gallium Nitride)
TechnologyCurrent Sensing
DraintoSourceVoltage(Vdss)-
Current-ContinuousDrain(Id)@25°C650 V
DriveVoltage(MaxRdsOn27A (Tc)
MinRdsOn)12V
RdsOn(Max)@Id77mOhm @ 2.2A, 12V
Vgs4.2V @ 10mA
Vgs(th)(Max)@Id6 nC @ 12 V
Vgs(Max)+20V, -1V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/Case16-DFN (8x8)
GateCharge(Qg)(Max)@Vgs16-PowerVDFN
Grade
Qualification
In Stock:
12712
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 17.9214 | |
| 10 | 17.563 | |
| 100 | 17.0253 | |
| 1000 | 16.4877 | |
| 10000 | 15.7708 |
Associated Product
