CGD65A055SH2
Part NoCGD65A055SH2
ManufacturerCambridge GaN Devices
Description650V GAN HEMT, 55MOHM, DFN8X8. W
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesICeGaN™ H2
Product StatusActive
FET TypeP-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C27A
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs4 nC @ 12 V
Vgs (Max)+20V, -1V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package16-DFN (8x8)
Package / Case16-PowerVDFN
Grade-
Qualification-
In Stock:
3500
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 11.97 | |
| 10 | 11.731 | |
| 100 | 11.37 | |
| 1000 | 11.01 | |
| 10000 | 10.53 |
Associated Product
