Specification
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)300mW
Collector Current (Ic)1A
DC Current Gain (hFE@Ic,Vce)270@100mA,2V
Transition Frequency (fT)300MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)180mV@500mA,25mA
Transistor TypePNP
Operating Temperature-55u2103~+150u2103@(Tj)
In Stock:
2468
Pricing
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Associated Product