DMG4N60SJ3
RoHS

DMG4N60SJ3

Part NoDMG4N60SJ3
ManufacturerDiodes Inc.
DescriptionMOSFET N-CH 600V 3A TO251
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ECAD Module DMG4N60SJ3
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Specification
PackageTube
Series-
ProductStatusObsolete
FETType3A (Tc)
TechnologyN-Channel
DraintoSourceVoltage(Vdss)MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C600 V
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.5Ohm @ 2A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs14.3 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)532 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature41W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 9818
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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