Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)65 V
Current-ContinuousDrain(Id)@25°C215mA (Ta)
DriveVoltage(MaxRdsOn2.5V, 5V
MinRdsOn)8Ohm @ 100mA, 5V
RdsOn(Max)@Id2.1V @ 250µA
Vgs0.6 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)42 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature700mW
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeX1-DFN1006-3
SupplierDevicePackage3-UFDFN
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4577
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.0352 | |
10 | 0.0345 | |
100 | 0.0334 | |
1000 | 0.0324 | |
10000 | 0.031 |