DMWS120H100SM4
Part NoDMWS120H100SM4
ManufacturerDiodes Inc.
DescriptionSIC MOSFET BVDSS: >1000V TO247-4
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C37.2A (Tc)
DriveVoltage(MaxRdsOn15V
MinRdsOn)100mOhm @ 20A, 15V
RdsOn(Max)@Id3.5V @ 5mA
Vgs52 nC @ 15 V
Vgs(th)(Max)@Id+19V, -8V
Vgs(Max)1516 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature208W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8606
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 20.8163 | |
| 10 | 20.4 | |
| 100 | 19.7755 | |
| 1000 | 19.151 | |
| 10000 | 18.3183 |
Associated Product
