DMWSH120H90SM3Q
Part NoDMWSH120H90SM3Q
ManufacturerDiodes Incorporated
DescriptionSIC MOSFET BVDSS: >1000V TO247 T
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs97.5mOhm @ 20A, 15V
Vgs(th) (Max) @ Id3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs50.9 nC @ 15 V
Vgs (Max)+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds1090 pF @ 1000 V
FET Feature-
Power Dissipation (Max)246W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
GradeAutomotive
QualificationAEC-Q101
In Stock:
2760
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 10.464 | |
| 10 | 10.254 | |
| 100 | 9.94 | |
| 1000 | 9.63 | |
| 10000 | 9.21 |
Associated Product
