DMWSH120H90SM4Q
Part NoDMWSH120H90SM4Q
ManufacturerDiodes Inc.
DescriptionSIC MOSFET BVDSS: >1000V TO247-4
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C40A (Tc)
DriveVoltage(MaxRdsOn15V
MinRdsOn)97.5mOhm @ 20A, 15V
RdsOn(Max)@Id3.5V @ 5mA
Vgs47.6 nC @ 15 V
Vgs(th)(Max)@Id+19V, -8V
Vgs(Max)1112 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature235W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4
SupplierDevicePackageTO-247-4
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
4233
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 19.68 | |
| 10 | 19.2864 | |
| 100 | 18.696 | |
| 1000 | 18.1056 | |
| 10000 | 17.3184 |
Associated Product
