G10N60
RoHS

G10N60

Part NoG10N60
ManufacturerDiodes Inc.
Description-
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ECAD Module G10N60
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Specification
MfrDiodes Incorporated
Series-
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25u00b0C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250u00b5A
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)u00b130V
Input Capacitance (Ciss) (Max) @ Vds1587 pF @ 16 V
FET Feature-
Power Dissipation (Max)178W (Tc)
Operating Temperature-55u00b0C ~ 150u00b0C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
Base Product NumberDMG10
In Stock: 5090
Pricing
QTY UNIT PRICE EXT PRICE
1 0.455
10 0.446
100 0.43
1000 0.42
10000 0.4
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product