DI016N06PQ2-AQ
Part NoDI016N06PQ2-AQ
ManufacturerDiotec Semiconductor
DescriptionIC
Datasheet
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Specification
PackageBulk
Series-
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Rds On (Max) @ Id, Vgs33mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1260pF @ 30V
Power - Max16.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackageTDSON-8-4
GradeAutomotive
QualificationAEC-Q101
In Stock:
2300
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.253 | |
10 | 0.248 | |
100 | 0.24 | |
1000 | 0.23 | |
10000 | 0.22 |