Specification
PackageBulk
Series-
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3538 pF @ 20 V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (DPAK)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs59 nC @ 10 V
Grade-
Qualification-
In Stock:
2187
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.428 | |
10 | 0.42 | |
100 | 0.41 | |
1000 | 0.39 | |
10000 | 0.38 |