Specification
PackageBulk
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2551 pF @ 50 V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-QFN (5x6)
Package / Case8-PowerTDFN
Grade-
Qualification-
In Stock:
2147
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.524 | |
10 | 0.513 | |
100 | 0.5 | |
1000 | 0.48 | |
10000 | 0.46 |