Specification
PackageBulk
Series-
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V
Vgs (Max)±20V
FET Feature-
Power Dissipation (Max)48.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (DPAK)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds7475 pF @ 20 V
Grade-
Qualification-
In Stock:
2737
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.61 | |
10 | 0.598 | |
100 | 0.58 | |
1000 | 0.56 | |
10000 | 0.54 |